Introduction

The ROX3SJR10 is a Metal Oxide Film Resistor manufactured by TE Connectivity Passive Product. This axial-design through-hole resistor operates with a nominal value of 100mΩ and a tolerance of ±5%. As part of our thorough analysis, we have compared the performance of the ROX3SJR10 against a statistical benchmark formed from other components of the same value to help electronics engineers evaluate if it is a suitable option for their applications.

In this review, we will examine the resistance and inductance measurements at 1 Volt and 10 Volts, as well as provide a detailed comparative analysis with the benchmark data. Our aim is to present a reliable, balanced, and credible evaluation that can assist engineers in making informed decisions.

Pros and Cons

• Pros:
• Wide range of test frequencies
• Presents stable resistance values at lower frequencies
• Good Quality Factor at certain test frequencies

• Inconsistent performance in higher test frequencies
• Poor data on 10 Volts test in higher frequencies
• Slightly higher Inductance values compared to the benchmark

Impedance

The ROX3SJR10 Resistor demonstrates a range of impedance values when subjected to various test frequencies between 5 and 1M cycles. At a test voltage of 1 Volt, this resistor's impedance ranges from 100.2m to 137.5m. On the other hand, under a 10 Volt test voltage, its impedance values broaden, falling anywhere between 24.09m and 117.1m. These impedance values are consistently higher than those observed in the statistical benchmark of similar components, which report an average impedance value ranging from 91.73m to 108.3m.

To further illustrate this, at specific test frequencies of 50k, 75k, and 100k, the ROX3SJR10 Resistor exhibits impedance values of 101.3m, 101.8m, and 102.2m at 1 Volt, respectively. These figures are slightly higher than the benchmark average impedance values of 92.22m, 92.43m, and 92.53m at the same frequencies. Similarly, at higher test frequencies between 550k and 1M cycles, the impedance for this resistor fluctuates between 115.5m and 137.5m at 1 Volt, as opposed to the benchmark average impedance values of 98.58m to 108.3m.

However, the ROX3SJR10 Resistor's impedance values at 10 Volts and test frequencies between 50k and 100k display lower values of 92.18m, 90.31m, and 90.89m respectively, which are much closer to the benchmark averages. This suggests that the resistor's impedance performance differs depending on the specific test voltage applied.

In the context of high-frequency applications, where lower impedance values are generally desired, the ROX3SJR10 Resistor might not be the most suitable choice due to its higher-than-average impedance values when compared to the statistical benchmark. Nevertheless, it may still be an appropriate selection for particular applications and scenarios where elevated impedance values are deemed necessary or advantageous.

Resistance

In this section, we will assess the resistance performance of the ROX3SJR10 against the provided statistical benchmark data for similar components. The nominal resistance value of this component is 100 milliohms (mΩ), with a tolerance of ±5%. LCR measurements have been recorded at both 1 Volt and 10 Volts test conditions with varying test frequencies.

Starting with the 1 Volt LCR measurements, the Series Resistance of the ROX3SJR10 resistor varies from a minimum of 100.2m Ohms to a maximum of 106.1m Ohms. At certain test frequencies, the resistor exhibits a higher resistance than the corresponding statistical benchmark's maximum value. For instance, when measured at a 100 kHz test frequency, the resistance is 101.8m Ohms, which exceeds the benchmark's maximum resistance of 100.6m Ohms. Although this deviation remains within the ±5% tolerance range, it could lead to undesirable consequences in applications where precise resistance matching is critically important.

When the LCR measurements are performed at a higher voltage of 10 Volts, the Series Resistance of the ROX3SJR10 resistor appears notably lower than those recorded at 1 Volt. In some instances, it even registers lower values than the statistical benchmark minimums. As an example, at a 1 kHz test frequency, the resistance measures 24.03m Ohms, which is substantially below the benchmark's minimum of 76.17m Ohms. On the other hand, for a 50 kHz test frequency, the resistance value rises to 92.05m Ohms and remains consistent with the provided benchmark data. However, it's worth noting that the available measurements for this component cease after the 700 kHz test frequency, rendering the comparison for the entire frequency range infeasible.

In summary, the resistance performance of the ROX3SJR10 resistor exhibits variations when measured against the statistical benchmark data. At lower voltage levels (1 Volt), its resistance tends to be slightly higher than the benchmark values, which could pose potential issues in applications where strict resistance matching is required. Conversely, at elevated voltage levels (10 Volts), its resistance dips significantly lower than the benchmark values, which could be advantageous for certain designs prioritizing reduced power dissipation. It is crucial to carefully evaluate the resistance characteristics of this resistor, ensuring that they align with the specific design requirements and desired operating conditions in the target application.

Inductance

The performance of the ROX3SJR10 resistor has been extensively analyzed, with a particular focus on the inductance aspect. By comparing the inductance measurements with benchmark data of other components that share the same value, we can gain a clearer understanding of its effectiveness and competence when chosen by skilled engineers for use in their circuit designs.

At the 1-Volt test frequency, inductance values tend to be higher than the minimum values found within the benchmark data, with only a few instances falling closer to the upper range. For example, at 5 Hz, the inductance measurement reached 4.874μH, exceeding the benchmark average of 3.411μH and approaching the maximum benchmark value of 5.906μH. Similarly, across various test frequencies like 50 Hz, the inductance measurement stands at 716nH, which is above the benchmark average of 598.7nH.

When examining the inductance measurements at the 10-Volt test frequency, we can observe mixed results. At 5 Hz, the inductance surges to an impressive 71.3μH, substantially higher than both the 1-Volt measurement and the statistical benchmark maximum of 5.906μH. On the other hand, at the 50k Hz frequency, the inductance value of 7.252nH is just above the benchmark minimum of 1.1nH but falls below the average benchmark value of 6.844nH.

In summary, the inductance behavior of the ROX3SJR10 resistor presents mixed results when compared to the benchmark data. It is essential for engineers evaluating this component for use in their circuits to carefully consider and account for the observed fluctuating inductance values when designing and selecting appropriate components for their specific applications. Familiarity with a comprehensive range of test frequencies and in-depth understanding of the inductor's behavior in various conditions will play a key role in making informed choices about the suitability of this particular resistor for a given application.

Comparative Analysis

The review subject is a TE Connectivity Passive Product ROX3SJR10 Resistor with a nominal value of 100m, ±5% tolerance, Metal Oxide Film composition, Through-Hole mounting, and an Axial package. Our comparative analysis of the ROX3SJR10's performance is derived from an assessment of the test results—LCR measurements provided at 1 volt and 10 volts—against the given statistical benchmark data.

At 1 volt frequency testing points, the ROX3SJR10 is characterized with slightly higher series resistance values compared to the averages. Specifically, the Series Resistance component is 100.2mΩ at 10 Hz, 100.3mΩ at 1 kHz, and 106.1mΩ at 1 MHz. These values are elevated relative to the average values from the statistical benchmark data: 92mΩ, 91.83mΩ, and 93.43mΩ, respectively.

As for the Series Inductance component, discrepancies exist when comparing the measured component values with the benchmark averages. The ROX3SJR10 exhibits higher inductance values for lower frequency test points, such as 4.874μH at 5 Hz and 1.021μH at 10 Hz, whereas the respective average values are 3.411μH and 868.9nH. However, the reverse occurs at higher frequencies; for instance, the Series Inductance for the reviewed component is 13.93nH at 1 MHz, compared to the benchmark average value of 6.152nH.

When examining the LCR measurements obtained at 10 volts, the dissipation factor values demonstrate discrepancies between the benchmark averages and the component data as well. In the ROX3SJR10, the dissipation factor remains low, reaching a high of only 5.153 at 500 Hz.

The observed differences between the ROX3SJR10's values and the statistical benchmark data, particularly in Series Resistance and Series Inductance components, suggest that engineers should exercise caution when considering this specific resistor for circuit designs that require exceptional performance and adherence to benchmark values.

Conclusion

In conclusion, after analyzing the performance of the TE Connectivity Passive Product's ROX3SJR10 Metal Oxide Film Resistor against the statistical benchmark, it is evident that the component is indeed a reliable and versatile option. The Resistor delivered a stable range of series resistance and demonstrated consistency across different test frequencies and voltages.

However, it is important to note that the ROX3SJR10 Resistor has shown higher impedance values compared to the average benchmark impedance at varying frequencies and voltages. The Series Inductance values of the Resistor were generally higher or on par with the statistical benchmark values, while this comparison shows that the Resistor does possess competitive inductive qualities, it also indicates limited room for improvement.

In comparison to the Quality Factor of the benchmark, the ROX3SJR10 showcases mixed results with values both above and below the benchmark's average. It is important for engineers to consider this aspect of the Resistor's performance when evaluating it for their circuit requirements.

Overall, while the TE Connectivity ROX3SJR10 Metal Oxide Film Resistor offers consistent performance and stable resistance values, further improvement in the areas of series inductance and quality factor would potentially elevate the component. Nevertheless, the Resistor remains an apt choice for engineers evaluating a reliable through-hole package Resistor for their circuit designs.