Reviews & Analysis

In-Depth Analysis of Samsung Electro-Mechanics' CL31B475KAHNNWE Capacitor Performance

By Mark Harris Monday, 30 January 2023

Looking for a reliable capacitor to enhance your electronic design? Dive into our comprehensive analysis of Samsung Electro-Mechanics' CL31B475KAHNNWE, a Ceramic: X7R capacitor with remarkable performance. Gain insights into key parameters such as impedance, capacitance, series resistance, and more, and find out if this capacitor is the optimal choice for your specific requirements.

Introduction

The Samsung Electro-Mechanics CL31B475KAHNNWE capacitor has been meticulously examined in this technical review, including comprehensive tests and comparisons to a statistical benchmark for components with identical value. As a Ceramic: X7R capacitor with a nominal value of 4.7μF and tolerance of ±10%, this component is a popular choice for degreed engineers developing a wide range of products.

Utilizing exhaustive LCR measurement data at both 1 Volt and 10 Volts across various frequencies, we have carefully evaluated the CL31B475KAHNNWE capacitor's performance, calling attention to key parameters such as impedance, series resistance, dissipation factor, and quality factor. The aim is to equip engineers with the necessary information to make informed decisions about the suitability of this capacitor for their intended applications.

Pros and cons of this particular capacitor include:

Pros:
  • Competitive performance compared to the statistical benchmark at certain test frequencies.
  • Wide test frequency range.
Cons:
  • Higher than benchmark dissipation factor observed in several test scenarios.
  • Performance variances in impedance and Q-factor at specific frequencies may warrant further investigation.

By systematically juxtaposing the CL31B475KAHNNWE capacitor data against the statistical benchmark data, this wide-ranging review seeks to illuminate the component's strengths and weaknesses, enabling engineers to make informed decisions on the suitability of this capacitor for their projects.

Impedance

In this comprehensive analysis of the Samsung Electro-Mechanics CL31B475KAHNNWE, we will assess its impedance performance compared to the statistical benchmark data for capacitors of the same value, providing a well-rounded understanding of its capabilities. Measurements discussed include those taken at 1 Volt and 10 Volts, allowing for an in-depth examination of its performance in a variety of scenarios and catering to diverse application requirements.

The LCR measurements reveal that at a frequency of 5 Hz, the impedance of the Samsung Electro-Mechanics CL31B475KAHNNWE stands at 6.476k Ohms for a test voltage of 1V, somewhat higher than the average impedance measured at 6.293k Ohms. It is essential to consider these deviations when selecting capacitors for specific applications to ensure optimal performance. With an increase in frequency, the impedance follows a downward trend, measuring 399.9m Ohms at 100 kHz, marginally below the benchmark average of 492m Ohms. These results convey that the Samsung Electro-Mechanics capacitor consistently maintains an impedance level relatively close to the statistical average across the testing range, indicating that it could be a suitable choice for use cases where the impedance requirements fall within this range.

When the voltage is increased to 10V, the CL31B475KAHNNWE capacitor exhibits an impedance value of 6.279k Ohms at 5 Hz, which is quite similar to the benchmark 1V results for this frequency. This resemblance in impedance performance can be observed at other test frequencies such as 10 kHz, and 50 kHz, with values of 3.169k Ohms and 810.7m Ohms recorded at 10V, respectively. The capacitor remains within a reasonable range of the benchmark values for frequencies up to 100 kHz, before a discernable difference emerges as the frequency exceeds this value.

The Samsung Electro-Mechanics CL31B475KAHNNWE demonstrates consistent impedance performance when compared to the statistical benchmark, particularly when operating at test frequencies up to 100 kHz. Though its performance deviates from the benchmark at higher frequencies, it performs admirably across the test voltages used in the LCR measurements. Owing to its stability at various test voltages and frequencies, this capacitor could be an ideal candidate for engineers working with applications that require a capacitor with a nominal value of 4.7μF operating within the tested ranges. However, as with all capacitors, end-users must always consider specific application requirements and provide appropriate margin when selecting components to ensure the best possible outcome.

Capacitance

When examining the capacitance characteristics of the Samsung CL31B475KAHNNWE capacitor, it is important to consider the measurements taken across various frequencies and voltages. At 1 Volt, the series capacitance of the Samsung capacitor initially starts a bit lower than the average benchmark values at lower frequencies, on average around 4-5% less. To illustrate this, at a frequency of 5Hz, the Samsung capacitor has a capacitance of 4.917μF, while the average benchmark value stands at 5.107μF.

As the test frequency increases, the capacitance of the CL31B475KAHNNWE decreases, and the gap between the component data and the benchmark average narrows significantly to within the ±10% tolerance range. When the test frequency reaches 1MHz, the Samsung capacitor logs a capacitance measure of 5.159μF, which is only slightly higher than the benchmark value of 5.077μF for the same frequency.

Moving on to the measurements taken at 10 Volts, similar observations can be made, with the Samsung component demonstrating a comparable or, in some cases, better performance. For example, the Samsung capacitor's capacitance at a frequency of 5Hz is recorded as 5.05μF, whereas the benchmark average at the same voltage is slightly lower at 5.107μF. Significantly, the Samsung CL31B475KAHNNWE capacitor maintains its performance and remains close to the benchmark values as the test frequency continues to increase. At 600kHz, it measures a capacitance of 4.808μF, which showcases that Samsung's capacitor is considerably more stable in comparison to the benchmark average when operating at higher frequencies.

In summary, the Samsung CL31B475KAHNNWE capacitor exhibits commendable capacitance performance across different voltages and frequencies. Although it starts with a slightly lower capacitance compared to the benchmark average at lower frequencies, it showcases considerable stability and consistency as the test frequency rises, ensuring that it meets or surpasses the expected benchmark values. These characteristics make the Samsung CL31B475KAHNNWE a reliable and high-performing capacitor in various scenarios.

Series Resistance

A voluminous, systematic, and wide-ranging analysis was performed on the series resistance component of the Samsung Electro-Mechanics CL31B475KAHNNWE capacitor. The analysis compared this capacitor's performance against a statistical benchmark dataset, which encompassed various capacitors with similar values, at 1 Volt and 10 Volts across numerous test frequencies.

Upon analyzing the data, the performance of CL31B475KAHNNWE at 1 Volt was observed to differ significantly from the benchmark data, mostly in a positive manner. This additional analysis offers valuable information for understanding the intrinsic characteristics of the component. Across most of the test frequencies, this particular capacitor exhibited an improved series resistance compared to the average series resistance from the benchmark dataset. For example, at 50 Hz and 1 Volt, the CL31B475KAHNNWE had a series resistance of 23.07 Ohms, which is noticeably lower than the average series resistance of 27.59 Ohms found in the dataset. Similar comparisons can be made at 100 Hz (12.01 Ohms vs. 13.82 Ohms), 500 Hz (2.27 Ohms vs. 2.885 Ohms), and 10 kHz (61.02 mOhms vs. 188.5 mOhms). The substantial decrease in series resistance is crucial, as it results in lower power dissipation and higher efficiency for electronic systems.

At 10 Volts, the performance of this capacitor was evaluated up to 700 kHz. Although some data points were not provided, the available data indicates an improvement in series resistance at numerous test frequencies. For instance, at 50 Hz, the measured series resistance was 28.1 Ohms, and at 100 Hz, it was 14.72 Ohms. At higher frequencies, such as 1 kHz, the series resistance is 1.736 Ohms. These values demonstrate the effectiveness of the CL31B475KAHNNWE capacitor in maintaining low series resistance even at elevated voltage levels. This attribute is highly beneficial in various high-voltage applications, such as power management and signal conditioning circuits.

When juxtaposing the performance of Samsung Electro-Mechanics' CL31B475KAHNNWE with the given statistical benchmark data, the capacitor exhibits generally improved series resistance properties across a wide range of test frequencies. Engineers evaluating this particular capacitor for integration into their products can be confident in the series resistance performance of CL31B475KAHNNWE in comparison to other components of the same value. As such, this capacitor's comprehensive performance parameters and its potential benefits in terms of efficiency and stability make it a potential candidate for a plethora of electronic applications.

Dissipation Factor and Quality Factor

The dissipation factor (Df) and quality factor (Q) are crucial parameters of capacitors in assessing energy loss and overall performance. When examining the Samsung Electro-Mechanics CL31B475KAHNNWE Ceramic X7R Capacitor, it is important to consider these factors across varying test frequencies and voltage levels. These values provide valuable insights into how efficiently the capacitor can manage energy dissipation and deliver optimal performance.

At a test voltage of 1 Volt, the average Df for this capacitor is 0.046, which implies satisfactory performance concerning energy dissipation. It consistently maintains Df values below 0.1 across a wide range of test frequencies from 5 Hz to 1 MHz, which is an indication of its efficiency in handling energy loss. The average quality factor at 1 Volt is observed as 27.87, indicating a good overall quality. Moreover, a peak Q value of 65.06 is recorded at 20 kHz test frequency, emphasizing the component's proficiency in minimizing energy loss within its operational range at specific test frequencies.

When tested at a higher voltage of 10 Volts, the average Df slightly rises to 0.053 but still maintains an acceptably low level, showcasing stable performance across varying voltage levels. The average Q value at 10 Volts declines to 22.81, which can be considered adequate for most electronic applications. Interestingly, a higher Q value of 436.2 is observed at a test frequency of 75 kHz, signifying an improved ability to minimize energy loss at this particular test frequency when operating at 10 Volts. Throughout the various test frequencies at 10 Volts, the capacitor continues to exhibit Df values below 0.1, highlighting its consistency in performance.

In comparison to the benchmark dataset, the Samsung Electro-Mechanics CL31B475KAHNNWE Capacitor exhibits competitive performance with respect to the dissipation factor and quality factor. The consistently low Df values at both 1 Volt and 10 Volts, combined with reasonably high Q values throughout numerous test frequencies, demonstrate an efficient energy dissipation management and overall decent quality in electronic applications. By understanding these factors, engineers and designers can make informed decisions on the suitability of this capacitor when selecting components for their circuits.

Comparative Analysis

In this section, we will conduct a comprehensive comparative analysis of the Samsung Electro-Mechanics' CL31B475KAHNNWE capacitor, a 4.7μF Ceramic X7R capacitor, which has a nominal voltage rating of 25V. The comparison will be performed against a statistical benchmark, formed from other components of the same value, in order to provide a voluminous and systematic evaluation of the capacitor's performance.

As we analyze the results of the CL31B475KAHNNWE LCR measurements at 1 Volt and compare them with the statistical benchmark data, it becomes evident that the capacitor's performance is within the average range for similar components on the market. Notably, at lower frequencies up to 100 kHz, the capacitor's performance remains close to the average. However, an interesting observation can be made at higher frequencies between 100 kHz and 1 MHz, where the CL31B475KAHNNWE capacitor exhibits superior performance compared to the maximum values found within the benchmark data.

Upon further inspection of the 1 Volt LCR measurements, we can conclude that not only does the CL31B475KAHNNWE capacitor remain within an acceptable range compared to the benchmark data, but its capacitance values are also on the higher side of the range. This suggests that the capacitor provides satisfactory performance with a potential for enhanced capacitance.

When comparing the CL31B475KAHNNWE capacitor's LCR measurements at 10 Volts to the benchmark data, we find similar behavior patterns as observed in the 1 Volt case. Moreover, these outcomes are also comparable to their respective 1 Volt counterparts, effectively demonstrating generally favorable performance compared to the benchmark data.

In conclusion, based on this wide-ranging comparative analysis, it can be inferred that the Samsung Electro-Mechanics' CL31B475KAHNNWE capacitor performs within the average to slightly above-average range when compared to the statistical benchmark for capacitors with the same value. Therefore, engineers should take into account the observed performance of this capacitor when considering its potential suitability for their circuits, particularly in applications requiring stability across a broad frequency range.

Conclusion

In conclusion, the CL31B475KAHNNWE ceramic X7R capacitor from Samsung Electro-Mechanics has shown some deviations from the statistical benchmark data. Overall, the component exhibits a fairly consistent performance, but there are some notable observations to consider when making a decision for its use in a specific circuit.

At 1V test voltage, the capacitor demonstrates a higher impedance on lower frequencies when compared to the average, and the dissipation factor is lower than the average. Meanwhile, its series resistance remains relatively higher at lower frequencies while maintaining similar results at higher frequencies compared to average values. Additionally, its series capacitance appears to be higher at lower frequencies but is close to the average at higher frequencies.

At 10V test voltage, the deviations from the statistical benchmark data are lower. Impedance and dissipation factor follow the average more closely. However, series resistance exhibits higher values at lower frequencies, and series capacitance remains similar to the average benchmark values.

In conclusion, the CL31B475KAHNNWE capacitor has mixed performance when compared to the statistical benchmark data. For applications where consistency within the statistical benchmark data is crucial, qualified engineers may want to consider the observed results carefully. It is important to note, however, that the performance could be suitable for specific applications where such deviations might not have a significant impact on the circuit functionality. Thus, the decision to use this capacitor should be based on individual project requirements and the priorities of the circuit design.

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