Introduction

If you’re an electronic engineer in search of a reliable, high-performance wirewound drum core inductor, take note of Samsung Electro-Mechanic’s part number CIGW201610GH4R7MLE. With a nominal value of 4.7µH and a ±20% tolerance, this product offers competitive performance numbers when compared to other inductors with similar specifications.

• PROS
• Consistent Inductance Value: Throughout most of the test frequencies, the part maintains stability in the series inductance, limiting variances.
• Manufacturer Reputation: Manufactured by Samsung Electro-Mechanics, which is a well-known and reputable company known for its high-quality electronic components.
• Wide Test Frequency Range: Useful in applications that require a wide range of operational frequencies, as it has been tested and proven to perform reliably from 5Hz to 1MHz.
• CONS
• Quality Factor Limitations: At lower test frequencies, the quality factor of CIGW201610GH4R7MLE is relatively low, which may not meet the requirements of specific applications.
• Series Resistance: Although relatively stable, series resistance values are higher than the statistical benchmark, which may pose a challenge for more demanding projects.

Based on the provided comparison data against the statistical benchmarks, let's delve deeper into the inductor's components, specifically addressing Inductance, Series Resistance, Dissipation Factor, and Quality Factor in a thorough Comparative Analysis.

Impedance

In this section, we thoroughly analyze the impedance performance of Samsung Electro-Mechanics' inductor, CIGW201610GH4R7MLE. We begin by examining the impedance characteristics at 1 Volt. From our observations, this inductor demonstrates performance within the benchmark range for lower test frequencies. However, as the frequency increases, the component exhibits higher impedance values compared to the average impedance of the statistical benchmark, which may affect its efficiency in high-frequency applications. For instance, at 50 kHz and 75 kHz, this inductor recorded greater impedances of 1.454 Ohms and 2.166 Ohms, respectively, contrasting to the benchmark average values of 1.562 and 2.269 Ohms.

Switching our focus to the 10 Volts LCR measurements, we notice similar impedance trends, albeit with slight variations in values. While the component's impedance remains within the lower end of the benchmark for the lowest frequencies up to 5 kHz, it underperforms in the higher frequency range. For example, at 100 kHz, the CIGW201610GH4R7MLE exhibits an impedance of 2.915 Ohms, which is marginally lower than the benchmark average of 2.987 Ohms but higher than the minimum threshold of 2.378 Ohms.

Taking into account the entire test frequency spectrum, we find that the Samsung Electro-Mechanics' CIGW201610GH4R7MLE inductor demonstrates a performance comparable to the benchmark average in low-frequency applications. However, as the frequency increases, the impedance values diverge from the benchmark average, suggesting potentially less optimal performances for high-frequency applications. Engineers planning to utilize this inductor in their designs should carefully examine these impedance performance results and determine their specific requirements before making a decision.

Inductance

When examining the inductance measurements of the CIGW201610GH4R7MLE at 1 Volt against the established statistical benchmark data, the results indicate that at lower test frequencies, the inductor's inductance values are relatively higher or comparable to the average (mean performance). Specifically, at 5Hz, it measures 12.63μH, which is in close proximity to the average value of 15.29μH. Moving to 10Hz, it measures 6.824μH, rivaling the benchmark average of 11.59μH.

As we progress towards higher test frequencies, the CIGW201610GH4R7MLE's inductance values decline, but still manage to remain above the benchmark's average. For instance, at 50Hz, the component measures 6.06μH, compared to the average of 7.348μH. This trend continues even in the higher test frequency range of 250kHz to 1MHz, with the inductor maintaining a relatively stable performance. Its inductance values lie in close proximity to the statistical benchmarks' average values, an indication of a strong performance characteristic.

At 10 Volts, the trend remains consistent, further demonstrating the performance reliability of the CIGW201610GH4R7MLE Inductor. It is essential to highlight that at 5Hz and 10Hz, the component's inductance values reach an impressive 86.25μH and 87.82μH, respectively. These figures noticeably surpass the statistical benchmark average in this voltage range. Within the range of 50kHz to 1MHz, the Inductor's inductance values display a similar performance pattern to the one observed in the 1 Volt range, competently approaching the percentile benchmark average values.

Overall, these results illustrate the CIGW201610GH4R7MLE Inductor's proficient performance concerning inductance values within both lower and higher test frequency ranges and various voltage levels. Its consistency in maintaining inductance measurements near or above benchmark averages emphasize its reliability and strong capability under different testing conditions, making it a commendable component in electronics engineering applications.

Series Resistance

When analyzing the series resistance performance of the Samsung Electro-Mechanics CIGW201610GH4R7MLE inductor, we scrutinize it against the statistical benchmark data gathered from other inductors with the same nominal value, in order to accurately evaluate its behavior over a range of test frequencies.

At a 1V test voltage, the CIGW201610GH4R7MLE exhibits a higher series resistance across all test frequencies as compared to the average series resistance of the statistical benchmark. For instance, at a frequency of 10 kHz, the inductor demonstrates a series resistance of 227.1m Ohms, which notably surpasses the benchmark average value of 267.2m Ohms. Moreover, as the frequency escalates towards 1 MHz, the component's series resistance amplifies from 721m Ohms to 308.6m Ohms. Although this increase outperforms the statistical benchmark average maximum (7.266 Ohms), it still remains within the acceptable range for various electronic applications.

When subjecting the inductor to a higher test voltage of 10V, its series resistance subsequently heightens, especially apparent at higher frequencies compared to the 1V test results. At 10 kHz, the component exhibits a series resistance of 237.1m Ohms, which is still greater than the previous benchmark comparison. Additionally, as the frequency advances to 1 MHz, the inductor's series resistance spikes to 884.6m Ohms, significantly outstripping the statistical benchmark's results.

Conclusively, the Samsung Electro-Mechanics CIGW201610GH4R7MLE inductor persistently demonstrates a superior series resistance compared to the benchmark averages for components with the same value. As higher series resistance may not be appropriate for all applications, electronics engineers must meticulously consider these findings when determining the applicability of this inductor to their circuit designs. This awareness will help avoid any inefficiencies or performance limitations caused by elevated series resistance.

Dissipation Factor and Quality Factor

Upon examining the CIGW201610GH4R7MLE LCR measurements, we can observe how the Quality Factor (Q) performance evolves as the test frequency increases. At lower frequencies, the Q factor is below 1, indicative of less efficient energy transfer to the circuit. However, the Quality Factor improves significantly when the test frequency reaches 100 kHz, exhibiting a value greater than 12 and continuing to escalate to nearly 40 at 850 kHz.

At a test voltage of 1 Volt, the Quality Factor starts at a low value of 0.01 for 100 Hz and progressively climbs to a maximum of 39.64 at 1 MHz. A slightly different pattern can be observed when the applied test voltage is increased to 10 Volts. In this scenario, the Quality Factor begins at 0.01 for 5 Hz, increases marginally to 0.02 for frequencies ranging from 10 Hz to 50 Hz, and then resumes its incremental growth, reaching a peak value of 32.65 at 1 MHz.

The CIGW201610GH4R7MLE Inductor consistently displays a higher Quality Factor at elevated voltages and frequencies, demonstrating enhanced energy delivery capabilities and responsiveness. This trend persists across the board, whether the input voltage is set at 1 Volt or 10 Volts.

Given that the Quality Factor remains relatively high throughout the majority of the frequency spectrum, we can deduce that the Dissipation Factor (D) remains low for this particular inductor. The lower Dissipation Factor signifies the inductor's ability to effectively minimize energy losses as heat during operation. It essentially reaffirms the inductor's potential suitability for high-performance applications focused on circuit efficiency and energy management.

Comparative Analysis

In our comprehensive analysis of Samsung Electro-Mechanics' CIGW201610GH4R7MLE Inductor, we compared its performance data to that of a carefully established statistical benchmark. This benchmark was calculated using the average data of similar inductors, resulting in an accurate and equal comparison for the CIGW201610GH4R7MLE Inductor.

Within identical test conditions, the CIGW201610GH4R7MLE consistently demonstrates a relatively higher Impedance (Ohms), falling between the average and maximum values of the reference inductors. This trend remains consistent across different test frequencies, as the CIGW201610GH4R7MLE Inductor's impedance readings never go below the average values of the benchmark. This will have implications on the device's operation for potential applications, and designers should thoroughly consider these factors in deciding the component best suited for their products.

Furthermore, the CIGW201610GH4R7MLE Inductor exhibits a higher Quality Factor compared to its counterparts, particularly when test voltages increase from 1V to 10V. The Quality Factor displayed by the CIGW201610GH4R7MLE is consistently above the average and maximum values of the benchmark data. This advantage demonstrates the Inductor's high performance and reliability, making it a prominent contender when seeking superior efficiency in an Inductor.

When comparing Series Resistance (Ohms) of the CIGW201610GH4R7MLE against the benchmark, it showcases readings consistently close to the benchmark's average values. These results speak to the Inductor's consistent performance, ensuring it meets the expectations for a product within its class.

Lastly, the Series Inductance (Henries) of the CIGW201610GH4R7MLE seems to slightly exceed the statistical benchmark for the majority of the test frequencies. Since a higher inductance rating can enhance device performance in certain applications, potential users of this Inductor should keep this merit in mind when selecting a component.

In summary, the Samsung Electro-Mechanics' CIGW201610GH4R7MLE Inductor stands out by displaying a higher Impedance and Quality Factor as opposed to its benchmark equivalents. While showcasing a consistent Series Resistance reading and a slightly higher Series Inductance value across several test frequencies, this comprehensive analysis should effectively equip designers in choosing the ideal Inductor - such as this Drum Core, Wirewound component - for their specific product requirements.

Conclusion

After thoroughly analyzing the performance of Samsung Electro-Mechanics' CIGW201610GH4R7MLE Inductor, it can be concluded that it showcases both impressive and lackluster qualities when measured against a statistical benchmark formed from other components with the same value. The 4.7μ drum core wirewound Inductor with surface mount package attracted particular interest due to its unique characteristics.

When drawing a comparison to the benchmark, the Inductor performs well within the average range at lower frequencies like 5kHz, 10kHz, and 20kHz, in terms of series resistance, series inductance, and quality factor. However, at higher frequencies beyond 50kHz, it boasts superior performance in quality factor, which can be attributed to its wirewound construction and drum core type.

Unfortunately, the Inductor's impedance figures in both 1 Volt and 10 Volt scenarios failed to outperform their corresponding benchmarks at each test frequency, consistently placing within average ranges established by the benchmark. This may indicate a need for further optimization in the component design for impedance performance.

Despite these shortcomings, the unique construction and materials used in the CIGW201610GH4R7MLE Inductor provide distinct advantages in specific performance areas, making it a viable choice for engineers who place importance on quality factor in their circuit designs. While this Inductor may not excel in impedance performance, it sets itself apart with its wirewound and drum core attributes, making it a noteworthy addition to the market.