Introduction

In this technical review, we will analyze the performance of Samsung Electro-Mechanics' capacitor with part number CL10B104KB8NNNL, a Ceramic X7R capacitor with the nominal value of 100nF (±10% tolerance), 50 V voltage rating, and 0603 (1608 Metric) package. Comparing its performance to the statistical benchmark data, we aim to provide engineers with a comprehensive performance review to determine if this component is an optimal choice for their designs. We will focus on key parameters like impedance, dissipation factor, quality factor, series resistance, and series capacitance.

Pros:

• Performance over a wide range of test frequencies
• Compatible with surface mount applications
• Small form factor (0603)

Cons:

• Lower quality factor at higher frequencies
• Potential issues with performance at different voltage levels
• Dissipation factor slightly higher than benchmark in some cases

The component performance will be compared against the statistical benchmark data, with measurements taken at both 1V and 10V for various test frequencies. The review will be divided into the following sections: Capacitance, Series Resistance, Dissipation Factor and Quality Factor, Comparative Analysis.

Impedance

The impedance of the Samsung CL10B104KB8NNNL Capacitor is evaluated against a statistical benchmark of similar capacitors with the same nominal value. This comprehensive comparison is conducted across a wide range of frequencies, spanning over several orders of magnitude, and two distinct voltage levels (1V and 10V) to thoroughly investigate the effectiveness of this capacitor in various electrical environments and conditions.

At the 1V level, the capacitor's impedance exhibits minimal deviation from the average benchmark impedance values, maintaining an excellent consistency in most cases, with deviations predominantly staying within ±5-6% of the reference data. For example, at 5kHz, the impedance of the CL10B104KB8NNNL is 317.8 Ohms, corresponding to 98.0% of the benchmark's average impedance (325.6 Ohms). Furthermore, at 1MHz, the measured impedance of 1.786M Ohms represents approximately 91.3% of the benchmark average impedance (1.958M Ohms). Throughout the entire test frequency range, this tight variation pattern persists, highlighting the remarkable consistency and stability of this capacitor's performance.

Comparable results are observed in the tests conducted at the 10V level. The performance of the CL10B104KB8NNNL Capacitor remains closely aligned with the benchmark statistics across all test frequencies. For instance, at 50kHz, its impedance stands at 29.45 Ohms, accounting for 84.6% of the reference impedance value (34.91 Ohms). Meanwhile, at 1MHz, a 1.786M Ohms impedance demonstrates a performance pattern that is remarkably similar to the 1V test results, indicating high consistency across different voltage levels.

In summary, the Samsung CL10B104KB8NNNL Capacitor's impedance performance proves to be highly reliable, as it remains relatively consistent with the benchmark statistics across the two utilized voltages and a wide frequency range. Typically deviating only around ±5-6% in most cases, this precise and balanced performance deems the CL10B104KB8NNNL Capacitor a dependable and viable option for electronics engineers who are evaluating capacitors in the Ceramic: X7R category, ensuring stable operation in a variety of applications.

Capacitance

The CL10B104KB8NNNL Capacitor, manufactured by Samsung Electro-Mechanics, is a Ceramic: X7R component with a nominal capacitance value of 100nF and a tolerance of ±10%. This section focuses on the comprehensive analysis of the device's performance, providing capacitance measurements at both 1 Volt and 10 Volts operating conditions.

For a 1 Volt test frequency, the CL10B104KB8NNNL consistently exhibits capacitance values above the average benchmark across all tested frequencies. For instance, when tested at a 5Hz frequency range, the component shows a capacitance measurement of 104.2nF compared to the average benchmark value of 101.8nF. Remarkably, the positive trend is maintained as the test frequency increases; at 1MHz, the component has a capacitance value of 89.09nF, which is still above the benchmark's average value of 82.53nF. The observed trend signifies that the CL10B104KB8NNNL capacitor offers reliable performance that often surpasses the average benchmark values at various test frequencies.

While operating at 10 Volts test conditions, the CL10B104KB8NNNL's capacitance performance stays above the statistical benchmark for most of the test frequencies. As observed at the lower 5Hz frequency, the component exhibits a capacitance of 123.4nF, significantly higher than the 10Hz measurement's average benchmark value of 123nF. It is important to note that data points for higher test frequencies, such as 800kHz and beyond, are incomplete. For instance, at 700kHz, the component value achieves 92.47nF. Even though complete data for higher test frequencies is not available, preliminary results indicate valuable performance. In conclusion, the CL10B104KB8NNNL capacitor demonstrates above-average capacitance performance when assessed under 1 Volt and 10 Volts test scenarios, making it an important subject for further exploration in practical applications.

Series Resistance

In the analysis of the Samsung Electro-Mechanics CL10B104KB8NNNL capacitor, the focus was placed primarily on its series resistance (ESR) performance in comparison to a statistical benchmark of similar capacitors. This is important because a capacitor with lower ESR can deliver better performance in various applications, such as filtering, bypassing, and decoupling, as it influences the overall efficiency, stability, and thermal properties of the system.

At 1 Volt, the CL10B104KB8NNNL capacitor exhibited better ESR results compared to the average values in the statistical benchmark data at almost all test frequencies. For example, at 5kHz, the capacitor showed an ESR of 6.205 Ohms, which is significantly lower than the benchmark average of 10.02 Ohms. This trend continued at other test frequencies such as 50kHz, where the ESR was measured at 555.4m Ohms, much lower than the statistical benchmark's 1.039 Ohms. Also, at 100kHz, the component reached 260m Ohms against the benchmark's 491m Ohms average. This indicates that the CL10B104KB8NNNL capacitor outperforms its counterparts for ESR, which would result in a lower power dissipation and improved operational stability of the end application.

Increasing the test voltage to 10 Volts, the CL10B104KB8NNNL capacitor still presented improved performance in comparison to the statistical benchmark throughout most test frequencies. At the 5kHz frequency, the capacitor recorded an ESR of 14.07 Ohms, outperforming the benchmark. And in other frequency tests such as 50kHz (1.26 Ohms) and 100kHz (557.9m Ohms) demonstrate similar benefits in reduced resistance for this component. Therefore, applications requiring low ESR values in higher voltage scenarios can also benefit from using the Samsung Electro-Mechanics CL10B104KB8NNNL capacitor.

It is crucial for both designers and engineers to take into consideration the ESR characteristics of capacitors when selecting components for their projects. In this instance, the Samsung Electro-Mechanics CL10B104KB8NNNL capacitor provides a good example of a component that delivers superior ESR performance compared to the statistical benchmark, which translates into improved overall performance, better efficiency, and higher stability in a wide range of applications.

Dissipation Factor and Quality Factor

In this section, we analyze and compare the performance of the CL10B104KB8NNNL capacitor by focusing on the Dissipation Factor (Df) and Quality Factor (Q) to evaluate its efficacy against the provided statistical benchmark data. It's important to remember that a low Df and a high Q factor are desirable attributes, as they indicate minimal energy dissipation and more efficient performance, respectively.

The CL10B104KB8NNNL was tested for Df and Q at both 1 Volt and 10 Volt measurements across various frequencies, ranging from 5 Hz up to 1 MHz. At 1 Volt, the Df remains within the range of 0.015 to 0.022, indicating minimal power loss. This performance level is considered satisfactory as the capacitor efficiently manages power consumption within this voltage range. However, while tested at 10 Volts, the Df values are higher, within the range of 0.027 to 0.053, demonstrating a noticeable increase in energy dissipation when operating at higher voltages. This information is crucial for engineers when designing circuits that will operate beyond 1 Volt, as capacitor efficiency decreases with increasing voltage.

When examining the Quality Factor, the Q values for the CL10B104KB8NNNL reveal a moderately high level, indicating proper efficiency when used under the specified conditions. More specifically, the Q values recorded at 1 Volt ranged between 44.58 and 66.75, showcasing satisfactory performance within this voltage range. However, the readings at 10 Volts exhibited reduced efficiency, with the Q-factor oscillating between 18.74 and 37.91. This means that at higher operating voltages, the CL10B104KB8NNNL's quality factor demonstrates a lower performance level in regards to minimizing energy losses in the circuit.

Taking into account the aforementioned data, it is clear that the CL10B104KB8NNNL delivers satisfying results when comparing it to the statistical benchmark. However, electronic engineers should be aware of the explicit increase in energy dissipation and the corresponding decrease in the Quality Factor's performance while operating the component at higher voltages. Each application should be carefully assessed to ascertain the potential impact of these factors on overall system performance.

Comparative Analysis

Conclusion

The Samsung Electro-Mechanics CL10B104KB8NNNL Ceramic X7R Capacitor exhibits respectable performance in comparison to the statistical benchmark at both 1 Volt and 10 Volts. With a nominal value of 100n and a tolerance of ±10%, the component is suitable for a wide range of applications where stability and consistency are required.

At test frequencies ranging from 5 Hz to 1 MHz, the CL10B104KB8NNNL's impedance, dissipation factor, and quality factor are comparable to those of the benchmark. The component's series resistance and capacitance remain within acceptable limits as well, providing an overall satisfactory performance. Furthermore, the CL10B104KB8NNNL performs better than the benchmark at higher frequencies above 20 kHz.

However, in terms of the Dissipation Factor and Quality Factor, the performance of CL10B104KB8NNNL at 10 Volts is noticeably lower than the benchmark with readings spanning from 0.027 to 0.053 compared to the benchmark's range of 0.01 to 0.05. This may indicate that the CL10B104KB8NNNL faces some limitations in higher voltage applications.

In conclusion, the Samsung Electro-Mechanics CL10B104KB8NNNL capacitor provides a good performance at a wide range of frequencies, with limitations observed at higher voltages. While this specific component may not be ideal for all high-voltage applications, its competence at lower voltage levels and frequencies serve to make it a valuable addition to many designs and systems.