Introduction

In this insightful analysis, we shall perform an in-depth review of the RSMF3JTR100 Resistor, a Metal Oxide Film resistor with 100m nominal value, manufactured by Stackpole Electronics Inc. The resistor will be assessed in contrast to the statistical benchmark data of other similar components. This impartial exploration serves to provide engineers with valuable information in determining whether this resistor is an optimal choice for their requirements.

• Pros:
  • Wide range of test frequency results
  • Low change in impedance over frequency increments
  • Very low dissipation factor and quality factor for various test frequencies
• Cons:
  • Incomplete data for higher voltage testing
  • Tolerance of ±5%, which can be higher than competitor offerings

Impedance

In this section, we will thoroughly analyze the impedance performance of the RSMF3JTR100 Resistor in relation to the provided statistical benchmark data. The RSMF3JTR100 Resistor displays an impedance range spanning from 99.06m to 127.9m across a variety of test frequencies. By comparing these values to the average impedance of the statistical benchmark, it becomes apparent that the RSMF3JTR100 Resistor demonstrates a higher level of performance in the majority of the test frequency ranges under consideration.

Particularly noteworthy deviations from the benchmark average can be observed within the frequency range of 50k to 1M. In this region, the component's impedance values significantly surpass both the average and maximum benchmark values. When evaluating the LCR measurements taken at 10 Volts, a marked shift in the impedance values becomes apparent. Specifically, a substantial reduction in impedance values is observed in the lower test frequency range (5 to 1k) as well as within the range of 10k and 20k. However, impedance values remain relatively elevated and comparable to the 1 Volt measurements within the higher frequency range (20k – 1M), reinforcing the observed deviation from the benchmark data.

Given the context of its impedance performance, the RSMF3JTR100 Resistor presents a captivating option for engineers who require higher impedance values across numerous test frequencies, especially within the 50k to 1M range, surpassing both the average and maximum benchmark data. Nevertheless, engineers must carefully evaluate the significant disparity in impedance values between the 1 Volt and 10 Volt measurements to ensure the resistor aligns with the specific demands and voltage requirements of their applications.

Resistance

When assessing the resistance performance of the RSMF3JTR100 Metal Oxide Film Resistor, it is imperative to analyze the component's specifications in comparison to the provided benchmark data for components with the same nominal value. This resistor has a nominal resistance of 100mΩ and a tolerance of ±5%.

Inspecting the LCR measurements obtained at 1 Volt for the RSMF3JTR100 resistor reveals that its performance often exhibits higher resistance values compared to the benchmark data, especially when the test frequency increases. For instance, at a test frequency of 50kHz, the average series resistance in the benchmark data is 92.15mΩ, whereas the RSMF3JTR100 measures 100mΩ. This value surpasses the maximum resistance level accounted for within the average, which is 104.6mΩ. This trend is observed to continue through higher test frequencies, such as 1MHz, where the component records a resistance of 104.9mΩ and the benchmark average is calculated as 93.43mΩ.

Analyzing the LCR measurements acquired at 10 Volts, however, paints a contrasting picture. Under these conditions, the resistor's performance consistently falls well within the range observed in the benchmark data. For example, at the 100kHz test frequency, the RSMF3JTR100 resistor displays a resistance value of 89.82mΩ. This level is situated between the maximum (104.6mΩ) and average (92.28mΩ) series resistance values accounted for in the benchmark data.

Upon close examination, it can be deduced that the RSMF3JTR100 resistor exhibits inconsistent performance results based on the test frequency and voltage applied during the measurement process. Therefore, engineers evaluating this component for adoption in their circuits should thoroughly examine the provided data, making an informed decision that suits the requirements of their respective applications.

Inductance

In the realm of inductance, the RSMF3JTR100 metal oxide film resistor shows a varied performance across different frequencies and voltages. At 1V, its inductance values lie within the average range for frequencies up to 10 Hz. For example, at 5 Hz and 10 Hz, the component displays series inductance values of 2.821 μH and 846.8 nH respectively, which are positioned between the minimum and maximum values evidenced by the statistical benchmark data. Furthermore, for higher test frequencies such as 150 kHz and 1 MHz, observed inductances of 13.3 nH and 11.64 nH are slightly above the average, suggesting enhanced performance in these frequency bands as compared to other components of the same value.

When the applied voltage is increased to 10V, LCR measurements reveal mixed inductance performance for this resistor. Notably, at 5 Hz and 10 Hz, the measured inductances of 98.78 μH and 88.49 μH respectively exceed the maximum values of the statistical benchmark. This behavior might be particularly essential to understand for applications where low-frequency performance is critical. However, the resistor shows inductance values well within the acceptable range according to the benchmark when frequencies range from 50 kHz up to 1 MHz.

Ultimately, the RSMF3JTR100 metal oxide film resistor exhibits better inductance performance at higher test frequencies and varied behavior at lower frequencies. These performance characteristics should be considered carefully by electronics engineers looking to incorporate this resistor in their circuit designs, ensuring its suitability for the specific requirements of their desired applications.

Comparative Analysis

In this comparative analysis, we will review the performance of Stackpole Electronics Inc's Metal Oxide Film Resistor, part number RSMF3JTR100, against the provided statistical benchmark. This resistor has a nominal value of 100 milliohms and a tolerance of ±5%. The comparison will focus on various parameters, including impedance, quality factor, series resistance and series inductance, as they play a pivotal role in determining the performance of the resistor in its practical applications.

Upon analyzing the LCR measurements, the tested RSMF3JTR100 metal oxide film resistor has consistently lower impedance when compared to the average impedance of the statistical benchmark across most test frequencies. Similarly, the series resistance of the RSMF3JTR100 is marginally lower than the statistical benchmark's average, indicating a superior performance in terms of power dissipation. This attribute is particularly valuable for engineers seeking to optimize their circuits for minimal energy consumption.

Moreover, the RSMF3JTR100 resistor exhibits lower series inductance levels on most test frequencies, compared to the statistical benchmark. A reduced series inductance is typically sought after as a desirable characteristic as it reduces signal distortion and noise resulting from reactive components hindering the signal flow. Although minor variations exist in some test frequency points, on the whole, the RSMF3JTR100 shows good agreement with the benchmark trend and improves upon it in terms of reduced series inductance.

However, the quality factor (Q factor) comparison reveals few test frequencies where the RSMF3JTR100 performs comparably or slightly worse when compared to the benchmark's Q factor values. A high Q factor signifies less power loss, suggesting this resistor may experience higher power loss under certain conditions as compared to other resistors within the same category.

In conclusion, while the RSMF3JTR100 metal oxide film resistor boasts several improvements over the statistical benchmark across various parameters, including lower impedance and series inductance, engineers should exercise caution when prioritizing higher Q factor components, as this resistor may perform suboptimally under certain conditions. The RSMF3JTR100 presents a suitable option for circuits requiring reduced power dissipation and lower series inductance, meeting and expanding upon the standard performance specifications while ensuring a reliable and efficient operation within electronic systems.

Conclusion

In this technical review, we have analysed the performance of the RSMF3JTR100 resistor from Stackpole Electronics Inc., a metal oxide film component with a nominal value of 100m and a tolerance of ±5%. The analysis is based on a comparison between the Impedance, Quality Factor, Series Resistance, and Series Inductance measurements obtained at 1 Volt and 10 Volts against a statistical benchmark derived from other components of the same value.

At 1 Volt, we can observe that the RSMF3JTR100 exhibits a slightly higher impedance when compared to the average impedance at various test frequencies. However, it still remains within close proximity to the benchmark's performance. The Quality Factor and Series Inductance metrics follow a similar pattern, revealing a resistor that is marginally above average in some respects, but still well within the range of its competitors. At 10 Volts, the RSMF3JTR100 demonstrates desirable characteristics regarding Dissipation Factor and Quality Factor in comparison to the benchmark in many test frequencies.

In conclusion, the RSMF3JTR100 resistor by Stackpole Electronics Inc. showcases a performance that is generally close to the statistical benchmark. While it might not be the absolute top performer in every metric, it does present an adequate option for engineers in search of a metal oxide film resistor that stays within a reasonable competitive range. Based on this review, the RSMF3JTR100 could be considered as a reliable and acceptable choice for various circuit applications where it meets the required specification and performance requirements.