Introduction

In this technical review, we will analyze the performance of Samsung Electro-Mechanics' capacitor (CL21A475KAQNNNE), which is a surface-mount, Ceramic X5R, 0805 (2012 metric) package capacitor with a nominal value of 4.7μF and a voltage rating of 25 volts. When comparing this capacitor's performance against a statistical benchmark established for capacitors of the same value, our impartial assessment is aimed at supporting engineers choosing components for their projects.

The following pros and cons summarise some noteworthy points observed about this capacitor with respect to benchmarks, to provide quick insights into its performance.

• Pros:
• At certain test frequencies, the capacitor exhibits a higher quality factor compared to the statistical benchmark.
• This capacitor demonstrates fairly low series resistance across various frequencies and voltage levels.
• It maintains a well-controlled dissipation factor in general.
• CL21A475KAQNNNE has a fairly wide performance range across test frequencies from 5 Hz to 1 MHz.
• Cons:
• The actual capacitance at some of the test frequencies deviates from the nominal capacitance value.
• At certain test frequencies, the quality factor is not as high as expected which can affect the overall energy efficiency.

With these factors in mind, the rest of the review will analyze the capacitor's behavior by examining its capacitance, series resistance, dissipation factor, and quality factor, before concluding with a comparative analysis against benchmark data.

Impedance

The impedance of the CL21A475KAQNNNE capacitor, when evaluated at 1 Volt, demonstrates noteworthy performance across a range of test frequencies. At 5 Hz, the impedance measures 5.745k Ohms, which falls within the benchmark range of 5.239k to 7.402k Ohms. Furthermore, at 10 Hz, the impedance amounts to 2.894k Ohms, situated comfortably within the benchmark range of 2.637k to 3.714k Ohms. This suggests that the capacitor performs well at lower test frequencies

As we observe the test frequency increment to 50 Hz and 100 Hz, the CL21A475KAQNNNE capacitor's impedance remains in close proximity to the benchmark average, displaying consistent performance. Remarkably, at 500 Hz, the capacitor possesses an impedance of 65.73 Ohms, surpassing the benchmark mean impedance of 67.72 Ohms. This outstanding performance continues at higher test frequencies, such as 1 kHz and 5 kHz, where the capacitor demonstrates lower impedance values compared to the benchmark average, indicating optimal functionality.

When the test conditions shift to 10 Volts, the CL21A475KAQNNNE's impedance performance maintains its strong consistency with the benchmark data, albeit with slight alterations. At lower test frequencies like 5 Hz and 10 Hz, the impedance values surpass the benchmark average but remain within the predetermined range. As the test frequency increases, the impedance values progressively deviate from the benchmark average, approaching the boundaries of the benchmark range. This behavior is particularly evident at frequencies above 500 Hz, indicating that the capacitor performs commendably at elevated test frequencies and voltages.

In summary, understanding the impedance performance of a capacitor across various frequencies and voltages is crucial when selecting components for specific applications. The CL21A475KAQNNNE capacitor's impedance characteristics demonstrate exceptional functionality and adaptability, particularly for higher test frequencies and voltage conditions. Evaluating this capacitor in the context of benchmark data further emphasizes its strong performance relative to comparable components.

Capacitance

In this section, we will focus our attention on the examination of the Samsung Electro-Mechanics CL21A475KAQNNNE Capacitor, particularly regarding its capacitance performance in comparison to a statistical benchmark. This X5R ceramic capacitor is characterized by a nominal value of 4.7μF, accompanied by a tolerance of ±10%, and a voltage rating of 25V, making it a common choice in various electronic applications.

Considering the component's LCR measurements in relation to the statistical benchmark at 1 Volt, we find that the CL21A475KAQNNNE Capacitor demonstrates a superior performance in lower test frequencies. In comparison to the average series capacitance, the capacitor succeeds in maintaining a higher capacitance value. However, as the test frequencies increase, capacitive performance begins to decline, with the capacitance value dropping beneath the minimum values of the benchmark data at frequencies above 150 kHz. Importantly, this behavior does not exceed accepted standards, as the capacitor's capacitance remains relatively close to the benchmark. This implies that while the CL21A475KAQNNNE Capacitor exhibits satisfactory performance in general applications, it may not be considered the optimal choice for high-frequency applications where performance requirements are more demanding.

Focusing on the LCR measurements taken at 10 Volts, we find a distinct deviation from the benchmark at lower test frequencies. As the test frequencies progress to higher levels, the component's performance converges more closely with the average values presented in the benchmark data. This behavior suggests that the Samsung Electro-Mechanics CL21A475KAQNNNE Capacitor is capable of performing satisfactorily in higher test frequencies when operating at elevated voltage levels. We can conclude that this capacitor exhibits decent capacitance performance across a wide range of test frequencies and voltages, which makes it suitable for various applications, while noting its limitations in high-frequency regions.

Series Resistance

Series Resistance, or Equivalent Series Resistance (ESR), is a vital parameter in capacitor performance as it affects the overall efficiency and performance of the capacitor. The ESR is the effective resistance in a capacitor's equivalent series circuit, which stems from the dielectric material, electrodes, and leads. A lower ESR corresponds to a more efficient capacitor, and therefore, a careful analysis of the Samsung Electro-Mechanics CL21A475KAQNNNE Capacitor's ESR characteristics will reveal crucial insights into its potential applications.

When operating at a voltage of 1 Volt, the Series Resistance measurements for the Samsung Electro-Mechanics CL21A475KAQNNNE Capacitor exhibit a range, from a minimum of 6.811mΩ at 1 MHz to a maximum of 448.7Ω at 5 Hz. In comparison to the statistical benchmark (averages based on similar capacitors) at 1 Volt, the measured Series Resistance overwhelmingly displays superior performance across multiple test frequencies, such as:^(i) at 5 Hz - 448.7Ω (CL21A475KAQNNNE) vs. an average of 252Ω (market benchmark)^, (ii) at 10 Hz - 226.1Ω (CL21A475KAQNNNE) vs. an average of 125.4Ω (market benchmark)^. This pattern continues for higher frequencies as well: 100 Hz (25.1Ω for CL21A475KAQNNNE vs. 13.82Ω for the average), 500 Hz (5.129Ω vs. 2.885Ω), and 1 kHz (2.289Ω vs. 1.348Ω).

Moving on to a higher operating voltage of 10 Volts, the Series Resistance measurements of the CL21A475KAQNNNE Capacitor demonstrate variability from a low of 370.5μΩ at 300 kHz to a high of 419.4Ω at 5 Hz. An examination alongside the benchmark affirms the capacitor's remarkable performance in multiple test frequencies, signifying high potential for multiple engineering applications. These results emphasize the importance of considering ESR across different operating conditions and frequencies, providing engineers with crucial information for selecting an appropriate capacitor for a specific application.

In conclusion, the Samsung Electro-Mechanics CL21A475KAQNNNE Capacitor's ESR characteristics demonstrate impressive performance, which can serve a wide variety of applications effectively. Analyzing and comparing ESR values across different frequencies and voltages will help engineers make informed decisions when designing and optimizing electronic systems.

Dissipation Factor and Quality Factor

The dissipation factor (Df) and quality factor (Q) play vital roles in evaluating the performance of capacitors, particularly with respect to energy loss and the effectiveness of a capacitor in a circuit. In this assessment, we analyze these factors pertaining to the CL21A475KAQNNNE capacitor and compare them to benchmarks.

At 1 Volt test configurations, the CL21A475KAQNNNE capacitor exhibits a Df ranging from 0.064 to 0.163 and a Q ranging from 6.11 to 15.64 across various test frequencies. These values illustrate how efficiently the capacitor transfers electrical energy and provide critical insights into its dielectric characteristics. However, when compared to common capacitors of the same value, they depict lower Df values and higher Q values, especially at higher test frequencies. This suggests the CL21A475KAQNNNE capacitor might underperform compared to other components in the same category.

For the 10 Volt test configurations, the Df of the CL21A475KAQNNNE ranges from 0.001 to 0.107, while the Q varies between 9.38 and 470.81 across the given test frequencies. It is crucial to acknowledge that an ideal capacitor would have a Df of 0 and a Q factor of infinity. Unfortunately, this comparison indicates that the CL21A475KAQNNNE capacitor again underperforms when compared to benchmark capacitors. This could potentially result in increased power loss and lower efficiency for users of this capacitor.

Given the significance of the dissipation factor and quality factor in determining a capacitor's performance and suitability to specific applications, engineers should exercise caution and carefully consider the CL21A475KAQNNNE's abilities when deciding whether this particular component is suitable for their design requirements. It is worth noting that the choice of capacitor should be based on specific application needs to optimize the performance of the electronic system in question. Nonetheless, this comparative analysis serves as a valuable point of reference for engineers in their decision-making process.

Conclusion

In this technical review, the performance of Samsung Electro-Mechanics' CL21A475KAQNNNE capacitor has been analyzed in comparison to the statistical benchmark data available for capacitors with a similar nominal value of 4.7μ, Ceramic: X5R composition. The CL21A475KAQNNNE has shown variable performance in various aspects such as impedance, series resistance, dissipation factor, and quality factor when compared to the benchmark data. Overall, it exhibits noteworthy results in certain test frequency ranges, making it a potential choice for electronics engineers considering its applicability for their circuits.

Despite some deviations from the statistical benchmark data, the CL21A475KAQNNNE shows commendable performance, particularly at higher test frequencies. While its impedance values at lower frequencies are higher compared to the benchmark figures, the CL21A475KAQNNNE maintains better or equivalent dissipation factor and quality factor values at most frequencies, indicating higher efficiency and stability. The component also features increasingly competitive series resistance values as the frequency rises, with some even showcasing superior characteristics. Importantly, these performance assessments were conducted at both 1 Volt and 10 Volts, further emphasizing the capacitor's adaptability and dependability across different operating voltage levels.

In summary, though the Samsung Electro-Mechanics' CL21A475KAQNNNE capacitor demonstrates certain discrepancies from the standard benchmark data, it still showcases notable attributes that could make it applicable for specific purposes, catering to electronics engineers' requirements in their circuit designs. The competent performance of CL21A475KAQNNNE Capacitor, specifically in dissipation factor, quality factor, and series resistance categories, indicates its potential to deliver value in certain suitable application environments.